International Journal of Research in Advanced Electronics Engineering
  • Printed Journal
  • Refereed Journal
  • Peer Reviewed Journal

P-ISSN: 2708-4558, E-ISSN: 2708-4566

International Journal of Research in Advanced Electronics Engineering


2022, Vol. 3, Issue 2, Part A
S. No. Title and Authors Name
1
On increasing of density of field-effect transistors in the framework of a bridge rectifier circuit
EL Pankratov
Int. J. Res. Adv. Electron. Eng., 2022; 3(2): 01-11
Abstract  |  Download  |  Country: Russia  |  File Size: 666 KB  |  Views: 114   Downloads: 31
2
A survey on communication security through quantum computing for vehicular ad hoc networks
Rohit Rai
Int. J. Res. Adv. Electron. Eng., 2022; 3(2): 12-20
Abstract  |  Download  |  Country: India  |  File Size: 487 KB  |  Views: 87   Downloads: 27
3
On approach to optimize manufacturing of field-effect heterotransistors framework a w-band mixer to increase their integration rate, influence mismatch-induced stress
EL Pankratov
Int. J. Res. Adv. Electron. Eng., 2022; 3(2): 21-43
Abstract  |  Download  |  Country: Russia  |  File Size: 905 KB  |  Views: 79   Downloads: 24
4
On approach to optimize manufacturing of field-effect heterotransistors framework a cascode amplifier to increase their integration rate: Influence mismatch-induced stress
EL Pankratov
Int. J. Res. Adv. Electron. Eng., 2022; 3(2): 44-66
Abstract  |  Download  |  Country: Russia  |  File Size: 625 KB  |  Views: 71   Downloads: 19
5
On approach to optimize manufacturing of field-effect heterotransistors in the framework of a CMOS current differencing differential input transconductance amplifier to increase their integration rate: Influence mismatch-induced stress
EL Pankratov
Int. J. Res. Adv. Electron. Eng., 2022; 3(2): 67-86
Abstract  |  Download  |  Country: Russia  |  File Size: 1258 KB  |  Views: 79   Downloads: 22
6
Electromagnetic plasma reactor: Implicit application of field torsion III: Derived ionic flow
Dr. Francisco Bulnes, JC García-Limón, Victor Sánchez and LA Ortiz-Dumas
Int. J. Res. Adv. Electron. Eng., 2022; 3(2): 87-92
Abstract  |  Download  |  Country: Mexico  |  File Size: 953 KB  |  Views: 201   Downloads: 81
7
On influence of mismatch-induced stress on charge carriers mobility in an implanted-junction rectifier
EL Pankratov
Int. J. Res. Adv. Electron. Eng., 2022; 3(2): 93-98
Abstract  |  Download  |  Country: Russia  |  File Size: 619 KB  |  Views: 10   Downloads: 5
International Journal of Research in Advanced Electronics Engineering
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