International Journal of Research in Advanced Electronics Engineering
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P-ISSN: 2708-4558, E-ISSN: 2708-4566

International Journal of Research in Advanced Electronics Engineering


2022, Vol. 3, Issue 2, Part A
On increasing of density of field-effect transistors in the framework of a bridge rectifier circuit


Author(s): EL Pankratov

Abstract: In this paper we introduce an approach to increase density of field-effect transistors in the framework of a bridge rectifier circuit. In the framework of the approach we consider manufacturing the inverter in a heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed in the framework of optimized scheme.

Pages: 01-11 | Views: 30 | Downloads: 8

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How to cite this article:
EL Pankratov. On increasing of density of field-effect transistors in the framework of a bridge rectifier circuit. Int J Res Adv Electron Eng 2022;3(2):01-11.
International Journal of Research in Advanced Electronics Engineering