International Journal of Research in Advanced Electronics Engineering
2024, Vol. 5, Issue 2, Part A
High-density nonvolatile memory array using germanium FinFET transistors
Author(s): Nur Aisyah binti Hassan, Muhammad Faizal bin Rahman and Siti Zulaikha binti Ahmad
Abstract: The increasing demand for high-density, energy-efficient, and reliable nonvolatile memory (NVM) technologies has driven significant research into alternative materials and device architectures beyond traditional silicon-based systems. This study investigates the potential of Germanium FinFET-based NVM arrays to address the limitations posed by silicon scaling. The primary objectives were to evaluate the threshold voltage shift, retention time, endurance cycles, leakage current, and read-write latency of Germanium FinFET devices, while identifying correlations between these performance parameters. Germanium wafers with optimized doping profiles were fabricated using high-k dielectric (HfO₂) and metal gate (TiN) materials. Photolithography, atomic layer deposition (ALD), and ion implantation techniques were employed for precision fabrication. Electrical characterization was performed using a semiconductor parameter analyzer and precision LCR meter. The study revealed a mean threshold voltage shift of 149.5 mV, indicating stable charge trapping, and an average retention time of 977.4 hours, slightly below the target of 1000 hours. Endurance cycles averaged at 1.001 million, demonstrating excellent robustness under repeated read-write operations. Leakage current was effectively minimized (0.486 nA), contributing to energy efficiency, while read-write latency averaged 19.99 ns, suggesting efficient data transfer capabilities. Statistical analysis showed moderate correlations between endurance cycles and threshold voltage shift (r = 0.279) and a weak negative correlation between leakage current and latency (r = -0.298). The results indicate that while Germanium FinFET-based NVM devices exhibit promising electrical performance, challenges persist in optimizing charge retention and minimizing leakage current variability. Practical recommendations include improved interface engineering, advanced passivation techniques, and cost-effective fabrication methods to enhance device scalability and reliability. This study contributes to advancing Germanium FinFET NVM technologies as a competitive alternative for next-generation memory applications.
DOI: 10.22271/27084558.2024.v5.i2a.46
Pages: 48-53 | Views: 47 | Downloads: 16
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How to cite this article:
Nur Aisyah binti Hassan, Muhammad Faizal bin Rahman, Siti Zulaikha binti Ahmad. High-density nonvolatile memory array using germanium FinFET transistors. Int J Res Adv Electron Eng 2024;5(2):48-53. DOI: 10.22271/27084558.2024.v5.i2a.46
