International Journal of Research in Advanced Electronics Engineering
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P-ISSN: 2708-4558, E-ISSN: 2708-4566

International Journal of Research in Advanced Electronics Engineering


2023, Vol. 4, Issue 1, Part A
On approach to increase integration rate of elements of an CMOS cross-coupled voltage controlled oscillator


Author(s): EL Pankratov

Abstract: In this paper we introduce an approach to increase integration rate of elements of a CMOS cross-coupled voltage controlled oscillator. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.

Pages: 04-24 | Views: 414 | Downloads: 193

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International Journal of Research in Advanced Electronics Engineering
How to cite this article:
EL Pankratov. On approach to increase integration rate of elements of an CMOS cross-coupled voltage controlled oscillator. Int J Res Adv Electron Eng 2023;4(1):04-24.
International Journal of Research in Advanced Electronics Engineering
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