International Journal of Research in Advanced Electronics Engineering
2022, Vol. 3, Issue 1, Part A
On increasing of density of elements of a current follower transconductance amplifier based on heterostructures to increase density of their elements with account of mismatch-induced stress
Author(s): EL Pankratov
Abstract: In this paper we introduce an approach to increase density of field-effect transistors in the framework of current follower transconductance amplifier. In the framework of the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
Pages: 56-77 | Views: 334 | Downloads: 116
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How to cite this article:
EL Pankratov. On increasing of density of elements of a current follower transconductance amplifier based on heterostructures to increase density of their elements with account of mismatch-induced stress. Int J Res Adv Electron Eng 2022;3(1):56-77.