International Journal of Research in Advanced Electronics Engineering
2022, Vol. 3, Issue 1, Part A
On approach to increase integration rate of field-effect heterotransistors in an operational amplifier of the band gap voltage reference
Author(s): EL Pankratov
Abstract: In this paper we introduce an approach to increase integration rate of elements of a operational amplifier of the bandgap voltage reference. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
Pages: 35-55 | Views: 742 | Downloads: 254
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How to cite this article:
EL Pankratov. On approach to increase integration rate of field-effect heterotransistors in an operational amplifier of the band gap voltage reference. Int J Res Adv Electron Eng 2022;3(1):35-55.
